Report 6372 It is further noted that, in either mode, the protective jumper between the common source and the common bias must be removed after installation in the cryostat. This jumper is provided to protect the amplifier MOSFET gates against excess static charge during handling. Molex Heavy Duty Power Connectors LPH Rcpt Assy RtAn 0 n 06 Pwr 36 Sig Pegs datasheet, inventory & pricing. Isc N-Channel MOSFET Transistor FDP8880FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 116m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25) 9.1. Alternative-and-equivalent-for-IR-IRL6372-MOSFET-SOP-8 Deutsch Espanol Francais Italiano Portugues Japanese Korean Arabic Russian +86 77 micmosfet@gmail.com. Transistor MOSFET Array Dual N-CH 30V 8.1A 8-Pin SOIC T/R. Click image to enlarge. Manufacturer: Infineon. Product Category: Discretes, Transistors, MOSFET Arrays. Avnet Manufacturer Part #: IRL6372TRPBF. Secondary Manufacturer Part #: SP001569038 Compare.
Type Designator: AON6372
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 26 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 47 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 325 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0072 Ohm
Package: DFN5X6
AON6372 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6372 Datasheet (PDF)
0.1. aon6372.pdf Size:259K _aosemi
AON637230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. aon6370.pdf Size:261K _aosemi
AON637030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. aon6382.pdf Size:339K _aosemi
AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. aon6312.pdf Size:261K _aosemi
AON631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 130A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. aon6380.pdf Size:368K _aosemi
6372 Mosfet Motor
AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. aon6354.pdf Size:346K _aosemi
AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. aon6314.pdf Size:359K _aosemi
AON631430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. aon6360.pdf Size:268K _aosemi
AON636030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. aon6324.pdf Size:352K _aosemi
AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. aon6358.pdf Size:344K _aosemi
AON635830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. aon6366e.pdf Size:362K _aosemi
AON6366E30V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V)
9.10. aon6384.pdf Size:344K _aosemi
AON638430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.11. aon6368.pdf Size:265K _aosemi
AON636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6314, AON6354, AON6358, AON6360, AON6362, AON6366E, AON6368, AON6370, IRF740, AON6380, AON6382, AON6384, AON6406, AON6528, AON6548, AON6560, AON6590.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Type Designator: FDP8880
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 55 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 54 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0116 Ohm
Package: TO220
FDP8880 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDP8880 Datasheet (PDF)
0.1. fdp8880 fdb8880.pdf Size:696K _fairchild_semi
0May 2008tmMFDP8880 / FDB8880N-Channel PowerTrench MOSFET30V, 54A, 11.6mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 11.6m, VGS = 10V, ID = 40Acontrollers. It has been op
0.2. fdp8880.pdf Size:283K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8880FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 116m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
6372 Mosfet Drive
9.1. fdp8870 f085.pdf Size:337K _fairchild_semi
July 2010FDP8870_F085N-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized fo
9.2. fdp8896.pdf Size:470K _fairchild_semi
NMay 2008tmMFDP8896N-Channel PowerTrench MOSFET30V, 92A, 5.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 7.0m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f
9.3. fdp8878.pdf Size:250K _fairchild_semi
6372 Mosfet Datasheet
November 2005FDP8878N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mGeneral Descriptions Features rDS(ON) = 15m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 19m, VGS = 4.5V, ID = 36Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con
9.4. fdp8874.pdf Size:469K _fairchild_semi
NMay 2008tmMFDP8874N-Channel PowerTrench MOSFET30V, 114A, 5.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.6m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized
9.5. fdp8876.pdf Size:308K _fairchild_semi
November 2005FDP8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona
9.6. fdp8860.pdf Size:323K _fairchild_semi
September 2006FDP8860tmN-Channel PowerTrench MOSFET 30V, 80A, 2.5mFeatures General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80Asynchronous or conventional switching PWM controllers. It has Lo
9.7. fdp8870.pdf Size:463K _fairchild_semi
eMay 2008FDP8870 tmMN-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f
9.8. fdp8896.pdf Size:284K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8896FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 59m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.9. fdp8874.pdf Size:283K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8874FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 53m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.10. fdp8860.pdf Size:284K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8860FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 2.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.11. fdp8870.pdf Size:284K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8870FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 41m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: FDP8870, STM101N, FDP8870_F085, STK900, FDP8874, STK801, FDP8876, STK600, 2N3824, STK400, FDP8896, STK103, FDP8N50NZ, FDPF10N50FT, FDPF10N50UT, FDPF10N60NZ, STM4472.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02