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JFET-MOSFET Power Amplifier

Ir. F. Didik Wiryawan Adhi Prasetya

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) There are two types namely; MOSFET5 1.Enhancement MOSFET, 2.Depletion - MOSFET. A gate voltage of between 10 and 15 volts ensures full turn-on with most MOSFET devices. If one or more supply rails are common to the power. What is the most popular MOSFET? For what specific applications? There is no one-size-fits-all for MOSFETs or for any other type of semiconductor device. MOSFETs get used in deep nanometer ICs like they Apple A12 processors. Download Depletion-mode MOSFET Modeling For Computer Aided Design - Sufia Haque-Ahmed on nr.centracter.biz. .semiconductor field-effect transistor (en); مقحل معدني مؤكسد, المقحل المعدني أحادي القطب, الموسفت (ar); IGFET, MOSFET (fr); MOSFET, MOS-FET, MOST (de).

Jakarta, Indonesia

A lovely country with endless attraction.

In the era of ’70 until the end of ’80, the audio amplifier manufacturers competed with each other offerring superior technical specifications in terms of the wide frequency response, total harmonic distortion and intermodulation distortion that under 0.01% (ranging 0.01 to 0001%) and many other things that could be regarded as a ‘selling point’ for each of each brand.
Until now, the technical specifications of the ‘ideal condition’ is still used as a reference.
But among the ‘audiophiles’, especially for the DIYer (Do It Your Self), seemingly the technical specifications of the ‘ideal condition’ will not be used as a single standard, although not to be ignored altogether.
Among this community (audiophiles), the resulting sound to reproduce the original sound is as beautiful as preferred.
It is often found an audio system has a beautiful voice with all the requirements of audiophile, however surprisingly, its common technical specifications are worse than a system of regular ‘HiFi Compo’.

There are 2 different adherents on topology but not necessarily debated:

Adherent 1 : Who need very few components, this may be called ‘minimalist’ or “KISS” (stand for Keep It So Simple) with the goal of natural sounded much less of sound colouration, regardless that the technical specifications are beyond the ideal.

Adherent 2 : Those are idealist design topology very obedient in the text book and an ideal outcome measurement, which resulted in the last chain becomes very complicated and requires many electronic components.

And I may add one more role models are : No minimalist but not too ‘text book minded’, but having a main purpose : to design amplifier having nice and beautiful sound but with the technical requirements which was not too bad.

AMPLFIER with JFET input and MOSFET output. Based on the schematic of a famous Swiss made power amplifier (Goldmund Mimesis3), I did some little modifications on each stage according to my personal taste.

After a long listening, testing and did some changes (tweaking) as well as an understanding of the sound character (a little research and trial), then as the end result, I put it in the design which now named : Mosfet Power Amplifier MP50Di. The Power Amplifier “MP50Di” using JFET (2SK170) in the front end and HITACHI/Renesas Lateral Mosfet (2SK1058/2SJ162) on the amplifier tail end.

Technically, the comparison of performance design using Bipolar Junction Transistor (BJT) and FET / MOSFET will not be much different, but the real difference will be felt at the time of listening especially the clarity and purity sounded on mid and highs region (vocal and acoustic instrument) which is difficult to meet on BJT. There are nuances unique sound that can not be generated by the BJT amplifier.

Design Topology DRAFT.
Before entering into a complete range of the MP50Di, it helps us look at the basic topology of this series starts from the most simple.
In addition, it should be noted that this project (especially MP50Di), is not recommended for beginners. Small mistakes made by one who has not had enough experience and do not understand basic circuit work, will result in useless waste of funds. The most basic circuit topology for this design can be seen in Figure-1.

It is a simple 3 stages amplifier:
– input, differential amplifier (or LTP = long-tailed pair),
– VAS (voltage amplifier stage) and
– the amplifier end (with mosfet 2SK1058/2SJ162).

Figure-1 :

The simplicity of the basic design is easily seen on a MOSFET amplifier circuit without including the driver stage.
It is almost impossible for BJT end with this simple design can produce output power of 50W even though half of it.
The output of the differential pair Q1 on Q1 and Q2 (2SC2240), is fed into Q3 (2SA968) which is a VAS with ‘bootstrap’ of R6 and R7.
Q3 is directly driving the final amplifier MOSFETs (K1058 & J162), which can produce up to 100W RMS power output (theoritically), which can not be applied at the BJT end amplifier (because the BJT is ‘current operated devices’ while the Power MOSFET is ‘voltage operated devices’ which does not require large currents to drive it).
Note: Q3 here using 2SA968, a medium power transistor, even though with a small transistor such as 2SA970 (or MPSA92), it can work well without any difference in sound quality. The use of 2SA968 is juts for job security of the device not too close to allowable heat dissipation and easy installation of the heatsink if needed.

Quality Improvement of Phase-1
Improved quality of phase-1 was done by adding a constant current source formed by the Q3A and QZ (2SC2240) replaced R4 and R5 and ‘current mirrors’ which is formed by Q3B and Q3C (2SA970) replaced R3.

Figure-2 :

These changes resulted in significant sound quality improvement.
The simplest thing that appeared in the measurement with the DMM (digital multi meter) was the DC offset of 35mV dropped dramatically to about + / – 3.5mV.
The schematic of this improved quality of phase-1 discribed in Figure-2
This circuit is very similar with Project 101 of Rod Elliot of ESP, Australia, the famous simple mosfet amplifier. (http://sound.westhost.com/project101.htm)
Theoretically, this quality improvement (Figure-2) were very influential in improving linearity (also increased in ‘open loop gain’), it was proven in comparative listening test.
Ears fatigue which arise at the time ‘listening’ on previous model, had been greatly reduced here. Music reproduction, sounded more detailed than ever before. Sound staging and clarity were improved compared to previously that had a little noisy because the sound of several musical instruments more likely fight over each other which caused image of ‘position of the music players’ were not definitively clear.

Quality Improvement Phase-2
Although Figure-2 has been producing a quite sufficient sound and can be said to be ‘superior’ than class ‘HiFi Compo’ (even a well-known branded), however driving final amplifier MOSFETs directly from a simple VAS (Voltage Amplifier Stage), has many weaknesses that result in disruption linearity at power levels above 10W (disclaimer : this is on my personal opinion, I didn’t measure it) especially in long enough operation.
This is because the VAS current is very small, less able to do a ‘charge’ and ‘discharge’ to the MOSFETs quickly.
Mosfet amplifier topology without a driver can work very well for the application of class A with low output (let say 10watt) but will be felt weakness on the operation of large power and not a class A (class B).
This weakness is one reason of ‘ears fatigue’ as mentioned above, nevertheless this weakness is only detectable by an experienced audiophile, it is not clearly detectable on measurement equipment (oscilosocope).

Improved quality of phase 2 was done by adding one stage of the driver (Q10 and Q11), 2nd VAS Q6-Q7 with current mirror which is formed by Q8-Q9 and changed the mode of final mosfet from a source follower to become a common source as set out in Figure-3.

Figure 3 :

The driver mode is a common emiter and the final is a common-source which both have voltage gain.

With this configuration, the amplifier would give more powerfull and tighter bass (I am a bass lover !)

(Updated July 13^th, 2012)

Most Common Logic Level Mosfet

To be honest, this configuration (tail end topology) was inspired by design of David NJ White, “High Quality 100W MOSFET Power Amplifier” (unfortunately, the link : www. wnaudio.com is no longer exist).
The change of simple VAS into differential VAS should also be supported by changed in configuration mode of differential input circuit (input LTP), by changing it from unbalance mode output (single ended) to balance mode output.
Changed in single VAS transistors into a differential VAS (VAS LTP) that loaded by current mirror Q5a and Q4a, providing a significant linearity improvement compared to the composition of the bootstrap R6 and R7 in Figure-1 and Figure-2.
With the high charging speed and discharge, it can achieve good linearity especially when dealing with fast music with dominant high notes.
In addition to change of VAS, the topology at the tail end also be changed which is no longer power follower (no voltage gain) but became a voltage gain circuit.

(July 13th, 2012)
At first glance, you would think of it as a schematic of GoldMund Mimesis3, but please look at the final stage, they are much different of mode. This is a drain follower driven by collector follower (common emitter, Q10-Q11).

I deliberately chosen the power supply voltage 56V to match my vintage SANSUI AU719 and designed the pcb with dimension matched to the main power unit of AU719. I took off the whole main power amplifier unit AU719 and replaced it with this design that is named MP50Di (stand for Mosfet Power Amplifier 50 watt Didik :p). The amplifier run in class AB with quiescent current 200mA, it is a heavily class AB and quite warm, need fan to cool it down.

Was I happy with this? Yes, of course but not really satisfied yet since I saw there was more able to be done for further improvement.

Further improvement will be coming soon ! 😆

——————————————————————————————————————-

Jakarta, July 6, 2016

Hi Mosfet Lovers !

After 5 years past and my promise, this is the latest version of my MP50Di that can run pure Class A. Difference to the first version is a separated supply rail to enable you to run in pure Class A by reducing voltage rail of the final power mosfet and increasing QCurrent to , depend on the Mosfets are used, 500-1100mA. Using 2SK1058/2SJ162 or BUZ900/905, QC 500mA – 600mA with 32V supply is enough, however if use IRFP240/9240, you need to run hot with 1000-1100mA per device.

VR for unmatched 2SK170 on differential input was added and you can also set its bias to meet your personal taste.

Set up manual, will be followed soon…..

• I already had built a Golmund amp is interested in your pcb thenk you

• hI It looks really fine but unfortunately differential pairs are not so
  perfect one in case of sounding (analyze limiting RF amplifiers you will find why)

• thanks prof uda share. BTW rangkaian ini memang agak ribet ya prof rangkaiannya? Kok saya coba buat rada susah ya? agal terus -_-

• Hello
  I am very interested in your MP50DI V2 I have the 2SK1058/2SJ162 mosfets original stored from the 1990’s would love to run in Class A.

  Do you have PCB’s available, BOM and a parts indicated schematic ?

  Please get back to me.

  John C.

8822 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 8822

Маркировка: 8820

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1.5 W

Предельно допустимое напряжение сток-исток |Uds|: 20 V

Предельно допустимое напряжение затвор-исток |Ugs|: 10 V

Максимально допустимый постоянный ток стока |Id|: 6 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm

Тип корпуса: TSSOP8

8822 Datasheet (PDF)

0.1. si8822.pdf Size:153K _vishay

0.2. dmg8822uts.pdf Size:150K _diodes

DMG8822UTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TSSOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

0.3. pt8822.pdf Size:2155K _htsemi

PT882220V Dual N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@1.8V, Ids@2A = 50m RDS(ON), Vgs@2.5V, Ids@5.5A = 32m RDS(ON), Vgs@4.5V, Ids@6.6A = 24m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions 1 8D1 D2 2 7S1S23 6S1 S24 5G1 G2

0.4. ao8822.pdf Size:197K _aosemi

AO882220V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8822 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

0.5. afn8822s.pdf Size:691K _alfa-mos

Most Common Mosfet Transistor

AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul

0.6. afn8822.pdf Size:691K _alfa-mos

AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited fo

0.7. 8822.pdf Size:556K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 88228822Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe 8822 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6 A (VGS = 10V)operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is

0.8. ssf8822.pdf Size:304K _silikron

SSF8822 D1D2DESCRIPTION The SSF8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2with gate voltages as low as 0.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S1 S2facilitated by its common-drain configuration. Marking and pin Assignment GENERAL FEATURES V = 20V,I = 7A DS

0.9. ftk8822.pdf Size:266K _first_silicon

SEMICONDUCTOR FTK8822 TECHNICAL DATAD 1D 2DESCRIPTIONThe FTK8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S 1 S 2facilitated by its common-drain configuration. Schematic diagramGENERAL FEATURES

0.10. ko8822.pdf Size:135K _kexin

SMD Type ICSMD Type MOSFETCommon-Drain Dual N-Channel EnhancementMode Field Effect TransistorKO8822TSSOP-8 FeaturesUnit: mm VDS (V) = 20V ID = 7A (VGS=10V) RDS(ON) 21m (VGS = 10V) RDS(ON) 24m (VGS = 4.5V) RDS(ON) 32m (VGS = 2.5V) RDS(ON) 50m (VGS = 1.8V)D1 D2 D1/D2 1 8 D1/D22 7S1 S23 6S1 S2G1 G2 4 5G1

0.11. elm588822a-s.pdf Size:1801K _elm

(common drain)Dual N-channel MOSFET ELM588822A-SGeneral description Features ELM588822A-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=7.2A resistance. Rds(on) = 28m (Vgs=4.5V) Rds(on) = 32m (Vgs=2.5V) Rds(on) = 45m (Vgs=1.8V)Maximum absolute ratingsTa=25C. Unless otherwise noted.Par

0.12. elm58822sa.pdf Size:1270K _elm

(common drain)Dual N-channel MOSFET ELM58822SA-SGeneral description Features ELM58822SA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on) = 32m (Vgs=4.5V) Rds(on) = 35m (Vgs=2.5V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage Vds 20 VGate-sourc

0.13. elm18822ba.pdf Size:395K _elm

(common drain)Dual N-channel MOSFET ELM18822BA-SGeneral description Features ELM18822BA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on) and low gate charge. Id=7A (Vgs=10V) Rds(on)

0.14. gsm8822.pdf Size:439K _globaltech_semi

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Super high density cell desig

0.15. gsm8822s.pdf Size:432K _globaltech_semi

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

0.16. mmn8822.pdf Size:154K _m-mos

MMN8822Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@10V, Ids@7A = 21mRDS(ON), Vgs@4.5V, Ids@6.6A = 24mRDS(ON), Vgs@2.5V, Ids@5.5A = 32mRDS(ON), Vgs@1.8V, Ids@2A = 50mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceIdeal for Li ion battery pack application

0.17. stn8822.pdf Size:610K _stansontech

Most Common Mosfet

STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer

0.18. stn8822a.pdf Size:734K _stansontech

STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook comput

Другие MOSFET... 4812, 4835, 4920, 4946, 4953, 6604, 8810, 8820, 2N7002, 9435, 4953A, 4953B, 9926A, 9926B, AO3410, APM2317, FDMA905.

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